Vol. 22 No. 3 (2023): Mapana Journal of Sciences
Research Articles

A Study on Effects of Gate Dielectrics in CNT-FET Using Non-Equilibrium Green’s Function Modelling

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  • Amit Kumar
Amit Kumar
Department of Electronic Science, Bhaskaracharya College of Applied Sciences, University of Delhi, South West Delhi, 110075.India.

Published 2023-12-13

Keywords

  • Wrap around CNTFET,
  • FET toy simulator ,
  • Gate dielectric variation,
  • Quantum capacitance

Copyright (c) 2023

Creative Commons License

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Abstract

This study examined how gate dielectric materials affect drain current and quantum capacitance in wrap-around CNTFET devices. We examined CNTFET dielectric materials using Nanohub's FET toy simulator using NEGF  (non-equilibrium Green's function) model. We found that gate-dielectric choice affects the drain current, and larger k values produced higher currents despite the same gate and drain voltages. However, the nano-metric device size limits electrons, causing drain current saturation early. Thus, dielectric and operational bias selection must be optimized. For high-k dielectrics, quantum capacitance dropped quickly after peaking. This can be explained by the fact that nano-sized materials have a lower density of energy states.

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