A Study on Effects of Gate Dielectrics in CNT-FET Using Non-Equilibrium Green’s Function Modelling


  • Amit Kumar Department of Electronic Science, Bhaskaracharya College of Applied Sciences, University of Delhi, South West Delhi, 110075.India.


Wrap around CNTFET, FET toy simulator , Gate dielectric variation, Quantum capacitance


This study examined how gate dielectric materials affect drain current and quantum capacitance in wrap-around CNTFET devices. We examined CNTFET dielectric materials using Nanohub's FET toy simulator using NEGF  (non-equilibrium Green's function) model. We found that gate-dielectric choice affects the drain current, and larger k values produced higher currents despite the same gate and drain voltages. However, the nano-metric device size limits electrons, causing drain current saturation early. Thus, dielectric and operational bias selection must be optimized. For high-k dielectrics, quantum capacitance dropped quickly after peaking. This can be explained by the fact that nano-sized materials have a lower density of energy states.


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