The Electrical Resistance Modulation in Silver Oxide Thin Films as a function of Thickness

Abstract

Silver oxide (Ag2O) thin films was deposited on to engraved fluorine –doped tin oxide (FTO ) glass surface using the Radio frequency (RF) sputtering technique. Post deposition, the layer was annealed at 200 C for 2 hours .the film thickness varies from 42 nm to 660 nm , was measured with a three dimensional (3D) non contact optical profiler .current voltage (I-V) characteristics was measured at room temperature , it reveals that the electrical resistivity of the thin films increased with increasing thickness. The Vander pauv method was used determine the electrical resistance, X-ray diffraction (XRD) examinations were used to assess the films structural characteristics, and field emission scanning electron microscopy (FESEM) was used to analyzed the surface morphology.